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DMN601VK-7

Manufacturer	Diodes Incorporated
Description	Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R DMN601VK-7 MOSFET DUAL N-CHANNEL ROHS 3K MOSFET N-CH DL 60V 250MW SOT-563 MOSFET Dual N-Channel DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Rad Hardened	No	ESD Protection	Y

FET Type	2 N-Channel (Dual)	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	250mW
Power - Rated	250 mW	Transistor Type	N-Channel
Number of Channels	2 Channel	Number of Elements	2
Vgs(th) (Max) @ Id	2.5V @ 250µA	Voltage - Breakdown	60 V
Rds On (Max) @ Id, Vgs	2000@10V mOhm	Power - Average Forward	250 mW
Power Dissipation (Max)	250	Vce(on) (Max) @ Vge, Ic	60 V
On-State Resistance (Max)	2 ohm	Gate Charge (Qg) (Max) @ Vgs	20
Drain to Source Voltage (Vdss)	60V	Current - Peak Pulse (10/1000us)	0.305 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	0.305 A
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V	Current - Continuous Drain (Id) @ 25degC	305mA

Operating Temperature

-65 to 150 °C

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