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DMN5L06DWK-7

Manufacturer	Diodes Incorporated
Description	Trans MOSFET N-CH 50V 0.305A 6-Pin SOT-363 T/R DMN5L06DWK-7 MOSFET DUAL N-CH 50V SOT-363 MOSFET Dual N-Channel MOSFET, NN CH, SOT-363 N Channel 31-91V
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	2 N-Channel (Dual)	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	250mW
Noise Figure	Not Required dB	Power - Rated	250 mW
Power - Output	Not Required dB	Frequency - Max	Not Required MHz
Transistor Type	N-Channel	Number of Elements	2
Vgs(th) (Max) @ Id	1V @ 250µA	Voltage - Breakdown	50 V
Voltage - Threshold	:1V	Current Rating (Max)	:800mA
Resistance - RDS(On)	:2ohm	Contact Voltage (Max)	:50V
Rds On (Max) @ Id, Vgs	2000@5V mOhm	Power Dissipation (Max)	:250mW
Vce(on) (Max) @ Vge, Ic	50 V	Current Drain (Id) - Max	0.305 A
On-State Resistance (Max)	:2ohm	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	50V	Current - Peak Pulse (10/1000us)	0.305 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	305 mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V	Current - Continuous Drain (Id) @ 25degC	305mA