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DMN2600UFB-7

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DMN2600UFB-7

Manufacturer
Description
MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS Trans MOSFET N-CH 25V 1.3A 3-Pin DFN T/R MOSFET N-CH DFN1006-3
Category
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Business

ProductMOSFET Small SignalOther NamesDMN2600UFB-7DI
Product CategoryMOSFETStandard Package3,000
Factory Pack Quantity3000Standard Package NameDFN

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideVgs (Max)±8
FET FeatureLogic Level GatePower - Max540mW
Transistor TypeN-ChannelNumber of Channels2 Channel
Number of Elements1Vgs(th) (Max) @ Id1V @ 250µA
Voltage - Breakdown25Rds On (Max) @ Id, Vgs350 mOhm @ 200mA, 4.5V
Power Dissipation (Max)540Vce(on) (Max) @ Vge, Ic25 V
On-State Resistance (Max)600 mOhmsGate Charge (Qg) (Max) @ Vgs0.85nC @ 4.5V
Drain to Source Voltage (Vdss)25VCurrent - Peak Pulse (10/1000us)1.3
Input Capacitance (Ciss) (Max) @ Vds70.13pF @ 15VCurrent - Continuous Drain (Id) @ 25degC1.3A (Ta)

Mechanical

Width0.6PackagingTape and Reel
Mounting TypeSurface MountMounting StyleSMD/SMT
Package / Case3-UFDFNLength - Overall1
Package QuantityDFNNumber of Positions3
Shell Size - Insert0.47Supplier Device Package3-DFN1006 (1.0x0.6)

Product Info

SeriesDMN26TechnologySi
Channel TypeEnhancementManufacturerDiodes Incorporated
ConfigurationSingle with Gate Protection DiodePrinted Circuit Board3

Environmental

Operating Temperature150

Documents & Media

PDF Document
PDF Document