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DMN2005LP4K-7

Manufacturer	Diodes Incorporated
Description	Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R MOSFET N-CH 20V 200MA 3-DFN MOSFET 30V 300mA
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Rad Hardened	No

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±10 V
FET Feature	Logic Level Gate	Power - Max	200mW
Noise Figure	Not Required dB	Power - Rated	400 mW
Power - Output	Not Required dB	Frequency - Max	Not Required MHz
Transistor Type	N-Channel	Delay to 1st Tap	13.7 ns
Number of Channels	1 Channel	Number of Elements	1
Vgs(th) (Max) @ Id	900mV @ 100µA	Voltage - Breakdown	20 V
Rds On (Max) @ Id, Vgs	1500@4V mOhm	Power - Average Forward	400 mW
Power Dissipation (Max)	200	Vce(on) (Max) @ Vge, Ic	20 V
Current Drain (Id) - Max	0.2 A	On-State Resistance (Max)	1.5 ohm
Current Transfer Ratio (Min)	40 mS	Switch Time (Ton, Toff) (Max)	4.06 ns
Vce Saturation (Max) @ Ib, Ic	Not Required %	Drain to Source Voltage (Vdss)	20V
Current - Peak Pulse (10/1000us)	0.3 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 10 V
Current - Drain (Idss) @ Vds (Vgs=0)	0.2 A	Input Capacitance (Ciss) (Max) @ Vds	41pF @ 3V
Current - Continuous Drain (Id) @ 25degC	200mA (Ta)

Operating Temperature

-65 to 150 °C

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