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DMN2004K-7

Manufacturer	Diodes Incorporated
Description	Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R N-CH MOS-FET+ESD 20V 1,5A SOT23 MOSFET N-CH 20V 540MA SOT23-3 MOSFET 20V 540mA MOSFET, N CH, 20V, 0.54A, SOT-23
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±8 V
FET Feature	Logic Level Gate	Power - Max	350mW
Noise Figure	Not Required dB	Power - Rated	350 mW
Power - Output	Not Required dB	Fall Time (Typ)	37.6 ns
Frequency - Max	Not Required MHz	Transistor Type	N-Channel
Delay to 1st Tap	59.4 ns	Number of Elements	1
Vgs(th) (Max) @ Id	1V @ 250µA	Voltage - Breakdown	20 V
Voltage - Threshold	:1.6V	Current Rating (Max)	:540mA
Resistance - RDS(On)	:550mohm	Contact Voltage (Max)	:20V
Rds On (Max) @ Id, Vgs	550@4.5V mOhm	Power Dissipation (Max)	:350mW
Propagation Delay (Max)	8.4 ns	Vce(on) (Max) @ Vge, Ic	20 V
Current Drain (Id) - Max	0.63 A	Power (Watts) - Per Port	0.35W
On-State Resistance (Max)	0.55 ohm	Voltage - Supply (Vcc/Vdd)	20V
Switch Time (Ton, Toff) (Max)	5.7 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	20V	Current - Peak Pulse (10/1000us)	0.63 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 8 V	Current - Drain (Idss) @ Vds (Vgs=0)	1.5A
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 16V	Current - Continuous Drain (Id) @ 25degC	630mA (Ta)

Operating Temperature

-65 to 150 °C

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