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BSS138-7-F

Manufacturer	Diodes Incorporated
Description	Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R N-CH MOS-FET 0,20A 50V SOT23 MOSFET N-CH 50V 200MA SOT23-3 MOSFET 300mW 50V DSS MOSFET, N CH, 50V, 0.2A, SOT23-3 MOSFET N, 50 V 0.2 A 0.2 W SOT-23, BSS138-7-F, Diodes Incorporated
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	300mW
Noise Figure	Not Required dB	Power - Rated	300 mW
Power - Output	Not Required dB	Frequency - Max	Not Required MHz
Transistor Type	N-Channel	Delay to 1st Tap	20 ns
Number of Elements	1	Vgs(th) (Max) @ Id	1.5V @ 250µA
Voltage - Breakdown	50 V	Voltage - Threshold	:1.2V
Current Rating (Max)	:200mA	Resistance - RDS(On)	:1.4ohm
Rds On (Max) @ Id, Vgs	3500@10V mOhm	Power Dissipation (Max)	:300mW
Vce(on) (Max) @ Vge, Ic	50 V	Current Drain (Id) - Max	0.2 A
Power (Watts) - Per Port	0.3W	On-State Resistance (Max)	3.5 ohm
Voltage - Supply (Vcc/Vdd)	50V	Switch Time (Ton, Toff) (Max)	20(Max) ns
Vce Saturation (Max) @ Ib, Ic	Not Required %	Drain to Source Voltage (Vdss)	50V
Current - Peak Pulse (10/1000us)	0.2 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)	0.2A	Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25degC	200mA (Ta)