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2N7002K-7

Manufacturer	Diodes Incorporated
Description	Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R N-CH MOS-FET+ESD 0,3A 60V SOT23 MOSFET N-CH 60V 300MA SOT23-3 MOSFET N-Channel MOSFET, N CH, 60V, 0.3A, SOT-23 N-CHANNEL ENHANCEMENT MODE MOSFET
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	9.9 ns
Vgs (Max)	±20 V	FET Feature	Logic Level Gate
Gate Charge	0.3 nC	Power - Max	370mW
Power - Rated	540 mW	Fall Time (Typ)	9.9 ns
Rise Time (Typ)	3.4 ns	Transistor Type	N-Channel
Delay to 1st Tap	15.7 ns	Vgs(th) (Max) @ Id	2.5V @ 1mA
Voltage - Breakdown	60 V	Voltage - Threshold	:1.6V
Current Rating (Max)	:800mA	Resistance - RDS(On)	:2ohm
Contact Voltage (Max)	:60V	Rds On (Max) @ Id, Vgs	2000@10V mOhm
Power Dissipation (Max)	:350mW	Propagation Delay (Max)	3.4 ns
Vce(on) (Max) @ Vge, Ic	60 V	Power (Watts) - Per Port	0.35W
Voltage - Supply (Vcc/Vdd)	60V	Gate Charge (Qg) (Max) @ Vgs	0.3nC @ 4.5V
Switch Time (Ton, Toff) (Max)	3.9 ns	Drain to Source Voltage (Vdss)	60V
Current - Peak Pulse (10/1000us)	0.38 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)	0.3A	Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25degC	380mA

Operating Temperature

-65 to 150 °C

PDF Document

PDF Document

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