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2N2907
| Manufacturer | |
| Description | Transistors Bipolar - BJT PNP Silicon Bipolar Transistors - BJT PNP Silicon |
| Category |
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Business
| Product Category | Transistors Bipolar - BJT | Factory Pack Quantity | 2000 |
Compliance
| RoHS | In Transition | ||
Electrical
| Transistor Type | PNP | Voltage - Supply | 40 V |
| Vce Saturation (Max) | 1.6 V | Gain Bandwidth Product | 200 MHz |
| Power - Average Forward | 0.4 W | Power Dissipation (Max) | 0.4 W |
| Vce(on) (Max) @ Vge, Ic | 60 V | Vce Saturation (Max) @ Ib, Ic | 5 V |
| Current - Collector Cutoff (Max) | 0.6 A | DC Current Gain (hFE) (Min) @ Ic, Vce | 35 |
Mechanical
| Packaging | Bulk | Mounting Style | Through Hole |
| Package / Case | TO-18 | ||
Product Info
| Series | 2N2907 | Manufacturer | Central Semiconductor |
Environmental
| Operating Temperature | - 65 C | ||