CP375-CWDM3011N-CT
| Manufacturer | |
| Description | MOSFET N-CH 11A 30V BARE DIE |
| Category |
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Compliance
| Part Status | Obsolete | Qualification | - |
Electrical
| FET Type | N-Channel | Vgs (Max) | ±20V |
| FET Feature | - | Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V | Power Dissipation (Max) | 2.5W |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 5 V | Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 15 V | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25degC | 11A (Ta) | ||
Mechanical
| Packaging | Tray | Mounting Type | Surface Mount |
| Package / Case | Die | Supplier Device Package | Die |
Product Info
| Mfr | Central Semiconductor Corp | Grade | - |
| Series | - | Technology | MOSFET (Metal Oxide) |
Environmental
| Operating Temperature | -55°C ~ 150°C (TJ) | ||
Documents & Media
PDF Document
PDF Document
PDF Document
PDF Document

