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NESG2101M16-T3-A
| Manufacturer | |
| Description | Transistors RF Silicon Germanium NPN High Frequency Transistors RF Bipolar NPN High Frequency RF Bipolar Transistors NPN High Frequency |
| Category |
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Business
| Product Category | Transistors RF Bipolar | Factory Pack Quantity | 10000 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Frequency | 2 GHz | Power - Rated | 190 mW |
| Frequency - Max | 2 GHz | Transistor Type | NPN |
| Voltage - Supply | 5 V | Power - Average Forward | 190 mW |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V | Current - Collector Cutoff (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 | ||
Mechanical
| Packaging | Reel | Mounting Style | SMD/SMT |
| Package / Case | M16 | ||
Product Info
| Type | RF Silicon Germanium | Technology | SiGe |
| Manufacturer | CEL | Configuration | Single |
Documents & Media
PDF Document