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NESG2101M05-A
| Manufacturer | |
| Description | Transistors RF Silicon Germanium NPN SiGe High Freq TRANS NPN 2GHZ M05 Transistors RF Bipolar NPN SiGe High Freq RF Bipolar Transistors NPN SiGe High Freq |
| Category |
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Business
| Other Names | NESG2101M05A | Product Category | Transistors RF Bipolar |
| Standard Package | 1 | Factory Pack Quantity | 1 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Gain | 11dB ~ 19dB | Power - Max | 500mW |
| Power - Rated | 175 mW | Transistor Type | NPN |
| Voltage - Supply | 5V | Frequency - Transition | 17GHz |
| Power - Average Forward | 175 mW | Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V | Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 35 mA | DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
Mechanical
| Packaging | Bulk | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | SOT-343F |
| Supplier Device Package | M05 | ||
Product Info
| Type | RF Silicon Germanium | Technology | SiGe |
| Manufacturer | CEL | ||
Environmental
| Operating Temperature | + 150 C | ||