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NESG2021M16-A
| Manufacturer | |
| Description | Transistors RF Silicon Germanium NPN High Frequency Transistors RF Bipolar NPN High Frequency RF Bipolar Transistors NPN High Frequency |
| Category |
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Business
| Product Category | Transistors RF Bipolar | Factory Pack Quantity | 1 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Power - Rated | 175 mW | Transistor Type | Bipolar |
| Power - Average Forward | 175 mW | Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Current - Collector Cutoff (Max) | 35 mA | ||
Mechanical
| Packaging | Reel | Mounting Style | SMD/SMT |
| Package / Case | SOT-343 | ||
Product Info
| Type | RF Silicon Germanium | Technology | SiGe |
| Manufacturer | CEL | ||
Environmental
| Operating Temperature | + 150 C | ||
Documents & Media
PDF Document