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NE85633-T1B-R25-A
| Manufacturer | |
| Description | Transistors RF Bipolar Small Signal NPN High Frequency TRANSISTOR NPN 1GHZ SOT-23 Transistors RF Bipolar NPN High Frequency RF Bipolar Transistors NPN High Frequency |
| Category |
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Business
| Other Names | NE85633-T1B-R25-ACT | Product Category | Transistors RF Bipolar |
| Standard Package | 3,000 | Factory Pack Quantity | 3000 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| Gain | 9dB | Frequency | 1 GHz |
| Power - Max | 200mW | Power - Rated | 0.2 W |
| Frequency - Max | 1 GHz | Transistor Type | NPN |
| Voltage - Supply | 12V | Frequency - Transition | 7GHz |
| Gain Bandwidth Product | 7 GHz | Power - Average Forward | 0.2 W |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 1GHz | Vce Saturation (Max) @ Ib, Ic | 3 V |
| Current - Collector (Ic) (Max) | 100mA | Current - Collector Cutoff (Max) | 0.1 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 | ||
Product Info
| Type | RF Bipolar Small Signal | Technology | Si |
| Manufacturer | CEL | Configuration | Single |
Environmental
| Operating Temperature | - 65 C | ||
Documents & Media
PDF Document
PDF Document