点击放大查看
NE662M04-T2-A
| Manufacturer | |
| Description | Transistors RF Bipolar Small Signal NPN High Frequency TRANSISTOR NPN 2GHZ M04 Transistors RF Bipolar NPN High Frequency RF Bipolar Transistors NPN High Frequency |
| Category |
对参数有疑问？问 AI 助手
Business
| Other Names | NE662M04-T2-ACT | Product Category | Transistors RF Bipolar |
| Standard Package | 3,000 | Factory Pack Quantity | 3000 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| Gain | 20dB | Frequency | 2 GHz |
| Power - Max | 115mW | Power - Rated | 115 W |
| Frequency - Max | 2 GHz | Transistor Type | NPN |
| Voltage - Supply | 3.3V | Frequency - Transition | 25GHz |
| Gain Bandwidth Product | 25 GHz | Power - Average Forward | 115 W |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 1.5dB @ 2GHz | Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Current - Collector (Ic) (Max) | 35mA | Current - Collector Cutoff (Max) | 35 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V | ||
Mechanical
| Width | 1.25 mm | Height | 0.59 mm |
| Length | 2 mm | Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Package / Case | SOT-343F | Supplier Device Package | M04 |
Product Info
| Type | RF Bipolar Small Signal | Technology | Si |
| Manufacturer | CEL | Configuration | Single Dual Emitter |
Environmental
| Operating Temperature | - 65 C | ||