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NE662M04-A

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NE662M04-A

Manufacturer
Description
Transistors RF Bipolar Small Signal NPN High Frequency TRANSISTOR NPN 2GHZ M04 Transistors RF Bipolar NPN High Frequency
Category
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Business

Other NamesNE662M04AProduct CategoryTransistors RF Bipolar
Standard Package1

Compliance

RoHSRoHS Compliant

Electrical

Gain20dBPower - Max115mW
Power - Rated0.115 WFrequency - Max25 GHz
Transistor TypeNPNVoltage - Supply3.3V
Frequency - Transition25GHzNoise Figure (dB Typ @ f)1.1dB ~ 1.5dB @ 2GHz
Vce Saturation (Max) @ Ib, Ic1.5 VCurrent - Collector (Ic) (Max)35mA
Current - Collector Cutoff (Max)0.035 ADC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 2V

Mechanical

PackagingBulkMounting TypeSurface Mount
Mounting StyleSMD/SMTPackage / CaseSOT-343F
Supplier Device PackageM04

Product Info

TypeRF Bipolar Small SignalConfigurationSingle

Documents & Media

PDF Document
PDF Document
PDF Document