NE3515S02-T1D-A
| Manufacturer | |
| Description | Transistors RF GaAs Super Low Noise Pseudomorphic Transistors RF JFET Super Low Noise Pseudomorphic |
| Category |
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Business
| Product | RF JFET | Product Category | Transistors RF JFET |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Gain | 12.5 dB | P1dB | 14 dBm |
| Frequency | 12 GHz | Noise Figure | 0.3 dB |
| Power - Rated | 165 mW | Current Transfer Ratio (Min) | 70 mS |
| Drain to Source Voltage (Vdss) | 4 V | Voltage - Gate Trigger (Vgt) (Max) | - 3 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 88 mA | ||
Mechanical
| Packaging | Reel | Mounting Style | SMD/SMT |
| Package / Case | S0-2 | ||
Product Info
| Type | GaAs HEMT | ||
Environmental
| Operating Temperature | + 125 C | ||
Documents & Media
PDF Document