NE3512S02-T1D-A
| Manufacturer | |
| Description | Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET |
| Category |
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Business
| Product | RF JFET | Product Category | Transistors RF JFET |
| Factory Pack Quantity | 10000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Gain | 13.5 dB | Frequency | 12 GHz |
| Noise Figure | 0.35 dB | Power - Rated | 165 mW |
| Current Transfer Ratio (Min) | 55 mS | Drain to Source Voltage (Vdss) | 4 V |
| Voltage - Gate Trigger (Vgt) (Max) | - 3 V | Current - Drain (Idss) @ Vds (Vgs=0) | 70 mA |
Mechanical
| Packaging | Reel | Mounting Style | SMD/SMT |
| Package / Case | S0-2 | ||
Product Info
| Type | GaAs HEMT | ||
Environmental
| Operating Temperature | + 125 C | ||
Documents & Media
PDF Document