NE3512S02-T1C-A
| Manufacturer | |
| Description | Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET HJ-FET NCH 13.5DB S02 Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET |
| Category |
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Business
| Product | RF JFET | Other Names | NE3512S02-T1C-ACT |
| Product Category | Transistors RF JFET | Standard Package | 2,000 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| Gain | 13.5dB | Frequency | 12GHz |
| Noise Figure | 0.35dB | Power - Rated | 165 mW |
| Voltage - Test | 2V | Voltage Rating | 4V |
| Transistor Type | HFET | Current - Output | 10mA |
| Current Rating (Max) | 70mA | Current Transfer Ratio (Min) | 55 mS |
| Drain to Source Voltage (Vdss) | 4 V | Voltage - Gate Trigger (Vgt) (Max) | - 3 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 70 mA | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Style | SMD/SMT |
| Package / Case | 4-SMD, Flat Leads | Supplier Device Package | S02 |
Product Info
| Type | GaAs HEMT | ||
Environmental
| Operating Temperature | + 125 C | ||
Documents & Media
PDF Document
PDF Document