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NE3509M04-A
| Manufacturer | |
| Description | Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET AMP HJ-FET 2GHZ 4-SMINI Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET |
| Category |
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Business
| Product | RF JFET | Other Names | NE3509M04A |
| Product Category | Transistors RF JFET | Standard Package | 1 |
| Factory Pack Quantity | 50 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Gain | 17.5dB | P1dB | 11 dBm |
| Frequency | 2GHz | Noise Figure | 0.4dB |
| Power - Rated | 150 mW | Power - Output | 11dBm |
| Voltage - Test | 2V | Voltage Rating | 4V |
| Transistor Type | HFET | Current - Output | 10mA |
| Current Rating (Max) | 60mA | Vce(on) (Max) @ Vge, Ic | - 0.5 V |
| Current Transfer Ratio (Min) | 80 mS | Drain to Source Voltage (Vdss) | 4 V |
| Voltage - Gate Trigger (Vgt) (Max) | - 3 V | Current - Drain (Idss) @ Vds (Vgs=0) | 60 mA |
Mechanical
| Packaging | Bulk | Mounting Style | SMD/SMT |
| Package / Case | SOT-343F | Supplier Device Package | M04 |
Product Info
| Type | GaAs HEMT | ||
Environmental
| Operating Temperature | + 150 C | ||