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NE3508M04-T2-A
| Manufacturer | |
| Description | Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET AMP HJ-FET 2GHZ 4-TSMM Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET |
| Category |
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Business
| Product | RF JFET | Product Category | Transistors RF JFET |
| Standard Package | 3,000 | Factory Pack Quantity | 3000 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Gain | 14dB | P1dB | 18 dBm |
| Frequency | 2GHz | Noise Figure | 0.45dB |
| Power - Rated | 175 mW | Power - Output | 18dBm |
| Voltage - Test | 2V | Voltage Rating | 4V |
| Transistor Type | HFET | Current - Output | 10mA |
| Vgs(th) (Max) @ Id | - 3 V | Current Rating (Max) | 120mA |
| Power - Average Forward | 175 mW | Vce(on) (Max) @ Vge, Ic | 4 V |
| Current Transfer Ratio (Min) | 100 mS | Drain to Source Voltage (Vdss) | 4 V |
| Voltage - Gate Trigger (Vgt) (Max) | - 3 V | Current - Drain (Idss) @ Vds (Vgs=0) | 120 mA |
| Current - Continuous Drain (Id) @ 25degC | 120 mA | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Style | SMD/SMT |
| Package / Case | SOT-343F | Supplier Device Package | F4TSMM, M04 |
Product Info
| Type | GaAs HEMT | Technology | GaAs |
| Manufacturer | CEL | ||
Environmental
| Operating Temperature | + 150 C | ||
Documents & Media
PDF Document
PDF Document