ONEIC.US
  1. Home
  2. Manufacturer
  3. nxp

  4. Discrete Semiconductors

nxp

nxp- Discrete Semiconductors

NXP Semiconductors N.V. is a global semiconductor company headquartered in Eindhoven, Netherlands, with over 50 years of innovation history, originally part of Philips and independently established in 2006. The company focuses on High Performance Mixed Signal (HPMS) and standard product solutions, combining leadership in RF, analog, power management, interface, security, and digital processing. Its core business areas span automotive, industrial & IoT, mobile, and communication infrastructure, serving leading OEMs worldwide. NXP offers a comprehensive product portfolio including the i.MX applications processors, LPC and Kinetis microcontroller series, S32 automotive platform, QorIQ/Layerscape communication processors, and secure identification solutions like MIFARE and SmartMX. In the automotive sector, it provides vehicle networking, secure access, and advanced driver-assistance systems (ADAS), with the S32 domain controller chips widely adopted. The company is recognized as the number one supplier in automotive semiconductors and secure identification (NFC), holding leading shares in automotive MCUs and car access systems. Following the 2015 merger with Freescale Semiconductor, N

03

Discrete Semiconductors - 型号列表

108 parts in total

Package / Case

Supplier Device Package

Input Capacitance (Ciss) (Max) @ Vds

Width

Other Names

Standard Package

Vce(on) (Max) @ Vge, Ic

Current - Drain (Idss) @ Vds (Vgs=0)

Part # Aliases

Packaging

Operating Temperature

Vgs(th) (Max) @ Id

Power Dissipation (Max)

Power - Max

Transistor Type

Voltage - Breakdown

Package Quantity

Current - Continuous Drain (Id) @ 25degC

Current - Peak Pulse (10/1000us)

Length

Package Cooled

Number of Positions

Vgs (Max)

Power - Rated

On-State Resistance (Max)

Factory Pack Quantity

Height

FET Type

Voltage - Cutoff (VGS off) @ Id

Voltage - Gate Trigger (Vgt) (Max)

Configuration

Standard Package Name

Length - Overall

Shell Size - Insert

Rds On (Max) @ Id, Vgs

Gain

Frequency

Frequency - Max

Current - Output

Power (Typ) @ Conditions

Size / Dimension

Resistance - RDS(On)

Drain to Source Voltage (Vdss)

Gate Charge (Qg) (Max) @ Vgs

Product Category

RoHS

Mounting Type

Type

Voltage - Breakdown (V(BR)GSS)

Rds On (Typ)

Lead Style

Power - Average Forward

Voltage - Test

Voltage Rating

Current Rating (Max)

Output Power

Noise Figure

Mounting Style

Channel Type

Printed Circuit Board

Delay to 1st Tap

Number of Elements

Switch Time (Ton, Toff) (Max)

Card Standard

Voltage - Supply

Voltage - Input (Min)

Frequency - Transition

Current - Collector (Ic) (Max)

Current - Collector Cutoff (Max)

DC Current Gain (hFE) (Min) @ Ic, Vce

Power - Output

Efficiency - Testing

Weight

Spg

Number of Units

Mfr Part #Quantity AvailablePricePackagingRoHSPackage / CaseStandard PackageMounting TypeSupplier Device PackageConfigurationOperating TemperatureTransistor TypeInput Capacitance (Ciss) (Max) @ VdsFactory Pack QuantityWidthMounting StyleNumber of PositionsPower - MaxFET TypeDrain to Source Voltage (Vdss)Vgs(th) (Max) @ IdVce(on) (Max) @ Vge, IcVgs (Max)Voltage - BreakdownPower Dissipation (Max)Channel TypeOther NamesManufacturerVoltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)Part # AliasesProduct CategoryLengthPackage CooledEU RoHSPackage QuantityPower - RatedNumber of ElementsHeightVoltage - Cutoff (VGS off) @ IdLength - OverallShell Size - InsertPrinted Circuit BoardCurrent - Continuous Drain (Id) @ 25degCCurrent - Peak Pulse (10/1000us)Resistance - RDS(On)Voltage - Breakdown (V(BR)GSS)Standard Package NameLead StyleOn-State Resistance (Max)Size / DimensionTypeRds On (Max) @ Id, VgsCard StandardGainTechnologyFrequencyFrequency - MaxCurrent - OutputPower (Typ) @ ConditionsRds On (Typ)FET FeatureGate Charge (Qg) (Max) @ VgsPower - Average ForwardDelay to 1st TapVoltage - TestVoltage RatingCurrent Rating (Max)Output PowerNoise FigureMechanical LifeSeriesSwitch Time (Ton, Toff) (Max)Voltage - SupplyVoltage - Input (Min)Frequency - TransitionVoltage - Supply (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Current - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceTab WidthPower - OutputEfficiency - TestingProductRad HardenedWeightSpgPolarityNumber of UnitsOperating Temperature - JunctionReturn LossPower Gain TypTest FrequencyNumber of ChannelsAmplifier TypeGain Bandwidth ProductNoise Figure (dB Typ @ f)Current Drain (Id) - MaxFall TimeGate ChargeRise Time (Typ)Current Transfer Ratio (Min)
BGD702
BGD702

NXP Semiconductors

1511: $386.512BulkRoHS CompliantSOT-115-Screw--+ 100 C--2513.75mmSMD/SMT7-------------BGD702,112RF Amplifier44.75mmSOT-115J----20.8mm-----------44.75 x 13.75 x 20.8mmGeneral Purpose Amplifier----750 MHz750 MHz435 mA19.7 dB---------6.5 dBObsolete--------------------21 dB19.7 dB750 MHz1General Purpose-------
J2A080GX0/T0BG295,
J2A080GX0/T0BG295,

nxp semiconductors

-ReelLead free / RoHS Compliant-12,500-------------------935292489118NXP Semiconductors-------------------------------------------*-------------------------------
J112,126
2
J112,126

NXP Semiconductors

-Tape & Box (TB)RoHS CompliantTO-226-3, TO-92-3 (TO-226AA) Formed Leads2,000Through HoleTO-92-3Single-N-Channel6pF @ 10V (VGS)2000-SMD/SMT-400mWN-Channel40V- 40 V40 V-----NXP Semiconductors- 40 V5mA @ 15VAMO J112JFET-------1V @ 1µA-----50 Ohm40V--------------------------------------------------------
J113,126
3
J113,126

NXP Semiconductors

-AmmoLead free / RoHS CompliantTO-226-3, TO-92-3 (TO-226AA) Formed Leads10,000Through HoleTO-92-3Single150N-Channel6pF @ 10V (VGS)20004.2(Max)SMD/SMT3400mWN-Channel40V500mV @ 1µA40 V-4040400N-NXP Semiconductors- 40 V2mA @ 15VAMO J113JFET--CompliantSPT---500mV @ 1µA4.8(Max)5.2(Max)3--100 Ohm40VTO-92Through Hole-----------100 Ohm------------------------------------------
J109,126
3
J109,126

NXP Semiconductors

-Tape & Box (TB)RoHS CompliantTO-226-3, TO-92-3 (TO-226AA) Formed Leads2,000Through HoleTO-92-3Single-N-Channel30pF @ 10V (VGS)2000-SMD/SMT-400mWN-Channel25V2V @ 1µA25 V-----NXP Semiconductors- 25 V80mA @ 15VAMO J109JFET-------2V @ 1µA---40 mA-12 Ohm25V-------------12 Ohm------------------------------------------
J175,116
J175,116

NXP Semiconductors

-Tape & Box (TB)RoHS CompliantTO-226-3, TO-92-3 (TO-226AA) Formed Leads10,000Through HoleTO-92Single+ 150 CP-Channel8pF @ 10V (VGS)2000-Through Hole-400mWP-Channel30V--------30 V7mA @ 15VJ175 T/RJFET----400 mW--3V @ 10nA-----125 Ohm30V--------------------------------------------------------
PH4025L,115
2
PH4025L,115

NXP Semiconductors

-Tape & Reel (TR)CompliantSC-100, SOT-669, 4-LFPAK1,500Surface MountLFPAK56, Power-SO8Single, Triple Source+150 °C-2601pF @ 12V-4.1mm-546.4WMOSFET N-Channel, Metal Oxide25V2.15V @ 1mA-±20 V25 V46.4 WEnhancement------5mmLFPAK---11.1mm----99A (Tc)99 A----0.004 Ω5 x 4.1 x 1.1mm-4 mOhm @ 25A, 10VPower MOSFET-------Logic Level Gate21.3nC @ 4.5V-35 ns-------28.3 ns------------------------------
PH4830L,115
2
PH4830L,115

NXP Semiconductors

-Tape & Reel (TR)CompliantSC-100, SOT-669, 4-LFPAK1,500Surface MountLFPAK56, Power-SO8Single, Triple Source+150 °C-2786pF @ 12V-4.1mm-562.5WMOSFET N-Channel, Metal Oxide30V2.15V @ 1mA-±20 V30 V62.5 WEnhancement------5mmLFPAK---11.1mm----84A (Tc)84 A----0.005 Ω5 x 4.1 x 1.1mm-4.8 mOhm @ 25A, 10VPower MOSFET-------Logic Level Gate22.9nC @ 4.5V-35 ns-------28 ns------------------------------
BFU630F,115
3
BFU630F,115

NXP Semiconductors

-Tape and ReelLead free / RoHS CompliantSOT-343F3,000Surface Mount4-DFPSingle+ 150 CNPN-30001.35(Max)SMD/SMT4200mW---16--200-568-8453-1NXP Semiconductors------CompliantDFP200 mW1--2.2(Max)0.75(Max)3----DFP---NPN--13dB ~ 22.5dBSi-21000(Typ)-----200 mW---------5.5V5.521GHz2.52.5 V30mA3 mA90@5mA@2VTab--------------21 GHz0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz-----
BF1211WR,115
2
BF1211WR,115

NXP Semiconductors

-Tape & Reel (TR)Lead free / RoHS CompliantSC-82A, SOT-3433,000Surface MountCMPAK-4Dual Gate, Single+150 °CN-Channel Dual Gate1.1 pF @ 5 V (Gate 2), 2.1 pF @ 5 V (Gate 1)-1.35mm-4-----6 V6 V0.18 WEnhancement568-1961-1-----2.2mmCMPAK---11mm-----0.03 A-----2.2 x 1.35 x 1mm--RF MOSFET29dB-400MHz-15mA34 dB-----5V6V30mA-0.9dB---------------------------------
BFG10/X,215
3
BFG10/X,215

NXP Semiconductors

-Tape and ReelLead free / RoHS CompliantTO-253-4, TO-253AA3,000Surface MountSOT-143BSingle175NPN-30001.4(Max)SMD/SMT4400mW---20--400-568-6184-6NXP Semiconductors------CompliantSOT-143B400 mW1--3(Max)1(Max)3-----Gull-wing--NPN--7dBSi-------400 mW----0.2----8V81.9GHz2.52.5 V250mA250 mA25@50mA@5VTab---------------------
BLF202,115
3
BLF202,115

NXP Semiconductors

-Tape and ReelLead free / RoHS CompliantSOT-409A500Surface Mount8-CDIPDual Drain, Dual Gate, Quad Source, Single+200 °C2 N-Channel (Dual)5.3 pF V @ 12.5-4.93mm-8-----±20 V40 V5.7 WEnhancement568-2410-1-----5.94mmCDIP-SMDCompliantCDIP SMD-1------1 A--CDIP SMDGull-wing4 Ω---RF MOSFET13dB-175MHz17520mA13 dB-----12.5V40V1A2-------------2W55-------------------
BLF2045,112
3
BLF2045,112

NXP Semiconductors

-BlisterLead free / RoHS CompliantSOT467C60ScrewLDMOSTSingle+200 °CLDMOS38 pF V @ 26-5.97mm-3-----±15 V65 V-N------20.45mmLDMOSTCompliantLDMOST-14.67mm-20.45(Max)4.67(Max)3-4.5 A--LDMOST-340(Typ)@12.5V20.45 x 5.97 x 4.67mm--RF MOSFET10dB-2GHz2200180mA10(Max)-----26V65V4.5A30-------------30W30(Max)-------------------
BFT46.215
3
BFT46.215

nxp semiconductors

-Tape and ReelLead free / RoHS Compliant3TO-236ABTape & ReelSurface MountSOT-23-3Single-65 to 150 °CN-Channel5pF @ 10V30001.4 mmSMD/SMT3250mWN-Channel25V25 V1.2 V-25 V25 V250N568-8482-1NXP Semiconductors- 25 V200µA @ 10VBFT46 T/RTransistors RF JFET3 mmTO-236ABCompliantTO-236AB250 mW-1 mm1.2V @ 0.5nA3(Max)1(Max)310 mA10 mA--SOT-23Gull-wing--Silicon---Si-------250 mW--------------------RF JFETNo0.34 g250unipolar1150C-------10mA----
PMBFJ310,215
2
PMBFJ310,215

nxp semiconductors

-Tape and ReelLead free / RoHS Compliant3TO-236ABTape & ReelSurface MountSOT-23-3Single-65 to 150 °CN-Channel5pF @ 10V30001.4(Max)SMD/SMT3250mWN-Channel25V2V @ 1µA25V-25 V25 V250N568-2083-1-- 25 V24mA @ 10VPMBFJ310 T/RJFET--CompliantTO-236AB250mW--2V @ 1µA3(Max)1(Max)3--50 Ohm25VSOT-23Gull-wing-----------50 Ohm-------------------------0.04 g30unipolar5-------------
PMBFJ308,215
2
PMBFJ308,215

nxp semiconductors

-Tape & Reel (TR)Lead free / RoHS Compliant3TO-236ABTape & ReelSurface MountSOT-23-3Single-65 to 150 °CN-Channel5pF @ 10V30001.4 mmSMD/SMT3250mWN-Channel25V- 25 V- 6.5 V-25 V25 V-N-NXP Semiconductors- 25 V12mA @ 10VPMBFJ308 T/RTransistors RF JFET3 mmTO-236AB--250 mW-1 mm1V @ 1µA---60 mA-50 Ohm25V--50 Ohms-Silicon50 Ohms--Si----50 Ohm--250 mW--------------------RF JFETNo----150C------------
ON5421,127
2
ON5421,127

nxp semiconductors

-Tube-TO-220-350-TO-220AB----50-Through Hole-----------NXP Semiconductors---------------------------Si-----------------------------------------------
OP582/ABD,029
OP582/ABD,029

nxp semiconductors

-----------2500--------------------------------------------------------Obsolete--------------------------------
PMGD290UCEAX
PMGD290UCEAX

NXP Semiconductors

90003000: $0.7293Tape & Reel (TR)Lead free / RoHS Compliant6-TSSOP, SC-88, SOT-3633,000Surface Mount6-TSSOPDual- 55 CN and P-Channel83pF @ 10V--SMD/SMT-280mWN and P-Channel20V1.3V @ 250µA20 V, - 20 V----568-10794-6-8 V725 mA, - 500 mA------990 mW------725mA (Ta), 500mA (Ta)--------380 mOhm @ 500mA, 4.5V--------Logic Level Gate0.68nC @ 4.5V-86 ns, 80 ns------*---------------------------31 ns, 72 ns0.45 nC, 0.76 nC4 ns, 30 ns1.6 S, 610 mS
PMDPB70XP,115
PMDPB70XP,115

NXP Semiconductors

-Tape and ReelLead free / RoHS Compliant6-UDFN Exposed Pad3,000Surface Mount6-HUSON (2X2)Dual150P-Channel680pF @ 15V30002SMD/SMT6490mW2 P-Channel (Dual)30V1V @ 250µA- 30 V12301170Enhancement568-10443-1-+/- 12 V- 3.8 A----CompliantHUSON EP1170 mW2--20.61(Max)62.9A (Ta)2.9---No Lead87@4.5V--87 mOhm @ 2.9A, 4.5V--------Logic Level Gate7.8nC @ 5V----------------------------------------
Page 1 / 6
1